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DEPFET detectors for direct detection of MeV Dark Matter particles

机译:DEpFET探测器,用于直接探测meV暗物质粒子

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摘要

The existence of dark matter is undisputed, while the nature of it is stillunknown. Explaining dark matter with the existence of a new unobserved particleis among the most promising possible solutions. Recently dark matter candidatesin the MeV mass region received more and more interest. In comparison to themass region between a few GeV to several TeV, this region is experimentallylargely unexplored. We discuss the application of a RNDR DEPFET semiconductordetector for direct searches for dark matter in the MeV mass region. We presentthe working principle of the RNDR DEPFET devices and review the performanceobtained by previously performed prototype measurements. The future potentialof the technology as dark matter detector is discussed and the sensitivity forMeV dark matter detection with RNDR DEPFET sensors is presented. Under theassumption of three background events in the region of interest and an exposureof one kg$\cdot$y a sensitivity of $\bar{\sigma}_{\bar{e}} = 10^{-41}$ cm$^{2}$for dark matter particles with a mass of 10 MeV can be reached.
机译:暗物质的存在是无可争议的,而暗物质的性质仍是未知的。在最有希望的解决方案中,使用新的未观察到的粒子来解释暗物质。最近,在MeV质量区域中的暗物质候选者越来越受到关注。与几个GeV到几个TeV之间的质量区域相比,该区域在实验上尚未开发。我们讨论了RNDR DEPFET半导体检测器在MeV质量区域直接搜索暗物质的应用。我们介绍了RNDR DEPFET器件的工作原理,并回顾了先前执行的原型测量所获得的性能。讨论了该技术作为暗物质检测器的未来潜力,并提出了使用RNDR DEPFET传感器进行MeV暗物质检测的灵敏度。假设在感兴趣的区域中发生了三个背景事件,并且曝光的1 kg $ \ cdot $ ya灵敏度为$ \ bar {\ sigma} _ {\ bar {e}} = 10 ^ {-41} $ cm $ ^ {对于质量为10 MeV的暗物质粒子,可以达到2} $。

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